semiconductor injection laser pdf

This content was downloaded from IP address 207.46.13.43 on 01/05/2020 at 03:49. Opt. endstream endobj 192 0 obj <> endobj 193 0 obj <> endobj 194 0 obj <>/Font<>/ProcSet[/PDF/Text]>> endobj 195 0 obj <> endobj 196 0 obj <> endobj 197 0 obj <> endobj 198 0 obj <> endobj 199 0 obj <> endobj 200 0 obj <> endobj 201 0 obj <> endobj 202 0 obj <> endobj 203 0 obj <> endobj 204 0 obj <>stream Optical injection in semiconductor ring lasers W. Coomans,∗S. Edge emitting LED. Index Terms— Semiconductor lasers, injection locking, modulation frequency response. 0000006190 00000 n 2.1. 0000085052 00000 n Edge emission is suitable for adaptation to feedback waveguide. Please see: Retraction - November 01, 2002; Abstract. Only the photons that leave the cavity from the mirrors constitute useful output. The understanding of this novel feature in ring lasers is based on the particular structure of a two-dimensional asymptotic phase space. Download as PDF. Also see diode.. A laser diode, also known as an injection laser or diode laser, is a semiconductor device that produces coherent radiation (in which the waves are all at the same frequency and phase) in the visible or infrared (IR) spectrum when current passes through it. In reality a semiconductor laser is simply a semiconductor diode, because its active medium is the junction of the forward biased P-N diode, shown as Here the metal contacts shown are used to connect the P-N material to the DC power supply. 0000004658 00000 n 0 0000007031 00000 n Edited by W.T. Download Article PDF. Modern semiconductor lasers restrict the excited volume to reduce the threshold current by applying quantum wells or quantum dots. a) 1 nm or less b) 4 nm c) 5 nm d) 3 nm View Answer. R =0.31 for the Volume 22, Part C, Pages iii-xix, 1-333 (1985) Download full volume. 0000014387 00000 n "� �1�w� ��Z�0 Since the semiconductor laser has unique features of high gain, low facet reflectivity, and amplitude-phase coupling through the α parameter, it is also sensitive to optical injection from a different laser. Lasers. Here the metal contacts shown are used to connect the P-N material to the DC power supply. semiconductor laser with a single-frequency optical injection, we calculate the asymptotic width of the locking range. William T. Silfvast, in Encyclopedia of Physical Science and Technology (Third Edition), 2003. G H M van Tartwijk 1 and D Lenstra 1. A laser diode, (LD), injection laser diode (ILD), or diode laser is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction. 0000003446 00000 n We report on electrically driven amplified spontaneous emission and lasing in tetracene single crystals using field-effect electrodes for efficient electron and hole injection. 0000001968 00000 n Here we present a semiconductor injection laser which operates in the THz range with an emis-sion spanning more than one octave , from 1.64 THz to 3.35 THz (from 89.5 m to 183 m in wavelength). Few studies have been done on the nonlinear dynamics of a semiconductor laser subjects to a non-constant optical injection. When current starts to flow spontaneous emission kicks in. 0000002521 00000 n • Demonstration of room-temperature, continuous-wave operation of the first bipolar cascade laser. We report on directional mode switching in semiconductor ring lasers through optical injection co-propagating with the lasing mode. Photons leave the cavity in two ways; they can either escape from the end facets (or mirrors) or they can get absorbed by the cavity. A SEMICONDUCTOR INJECTION-SWITCHED HIGH-PRESSURE SUB-10-PICOSECOND CARBON DIOXIDE LASER AMPLIFIER by Michael Kon Yew Hughes B.Sc. iL ��Fl)L/7M��q@�}?�D�Lo8V œ-��@� �� Y�� endstream endobj 96 0 obj 420 endobj 68 0 obj << /Type /Page /Parent 63 0 R /Resources 69 0 R /Contents 79 0 R /MediaBox [ 0 0 595 842 ] /CropBox [ 42 81 553 761 ] /Rotate 0 >> endobj 69 0 obj << /ProcSet [ /PDF /Text /ImageC /ImageI ] /Font << /TT2 70 0 R /TT4 72 0 R /TT6 71 0 R /TT7 81 0 R >> /XObject << /Im1 82 0 R /Im2 93 0 R /Im3 94 0 R >> /ExtGState << /GS1 88 0 R >> /ColorSpace << /Cs6 74 0 R /Cs9 77 0 R /Cs10 76 0 R >> >> endobj 70 0 obj << /Type /Font /Subtype /TrueType /FirstChar 32 /LastChar 149 /Widths [ 278 0 0 0 0 0 0 0 333 333 0 0 0 0 0 0 556 556 556 556 556 556 556 556 556 0 278 0 0 0 0 0 0 0 0 0 0 0 0 778 0 0 0 0 556 833 0 0 667 0 722 0 611 0 0 0 0 0 0 0 0 0 0 0 0 556 556 500 556 556 278 556 556 222 222 500 222 833 556 556 556 556 333 500 278 556 500 722 500 500 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 350 ] /Encoding /WinAnsiEncoding /BaseFont /PFCJHC+Arial /FontDescriptor 78 0 R >> endobj 71 0 obj << /Type /Font /Subtype /TrueType /FirstChar 32 /LastChar 133 /Widths [ 278 0 0 0 0 0 0 0 333 333 0 584 278 333 278 278 556 556 556 0 0 0 556 0 556 0 333 0 0 584 0 0 0 722 722 722 722 667 611 778 722 278 556 0 611 833 722 778 667 0 722 667 611 722 0 0 0 0 0 0 0 0 0 0 0 556 611 556 611 556 333 611 611 278 278 556 278 889 611 611 611 611 389 556 333 611 556 778 556 556 500 0 0 0 584 0 0 0 0 0 0 1000 ] /Encoding /WinAnsiEncoding /BaseFont /PFCJLF+Arial,Bold /FontDescriptor 75 0 R >> endobj 72 0 obj << /Type /Font /Subtype /TrueType /FirstChar 32 /LastChar 118 /Widths [ 278 0 0 0 0 0 0 0 0 0 0 0 278 333 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 722 722 0 0 0 0 278 0 0 611 833 0 0 667 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 556 0 556 611 556 0 611 611 278 0 0 0 0 611 611 0 0 389 556 333 0 556 ] /Encoding /WinAnsiEncoding /BaseFont /PFCJKD+Arial,BoldItalic /FontDescriptor 73 0 R >> endobj 73 0 obj << /Type /FontDescriptor /Ascent 905 /CapHeight 0 /Descent -211 /Flags 96 /FontBBox [ -560 -376 1157 1000 ] /FontName /PFCJKD+Arial,BoldItalic /ItalicAngle -15 /StemV 143.849 /FontFile2 84 0 R >> endobj 74 0 obj [ /ICCBased 92 0 R ] endobj 75 0 obj << /Type /FontDescriptor /Ascent 905 /CapHeight 718 /Descent -211 /Flags 32 /FontBBox [ -628 -376 2000 1010 ] /FontName /PFCJLF+Arial,Bold /ItalicAngle 0 /StemV 144 /XHeight 515 /FontFile2 83 0 R >> endobj 76 0 obj [ /Indexed 74 0 R 60 87 0 R ] endobj 77 0 obj [ /Indexed 74 0 R 255 89 0 R ] endobj 78 0 obj << /Type /FontDescriptor /Ascent 905 /CapHeight 718 /Descent -211 /Flags 32 /FontBBox [ -665 -325 2000 1006 ] /FontName /PFCJHC+Arial /ItalicAngle 0 /StemV 0 /XHeight 515 /FontFile2 85 0 R >> endobj 79 0 obj << /Length 1514 /Filter /FlateDecode >> stream Our simple analytical expression is in good agreement with direct numerical simulations of the full-model equations and can be considered as an analog of the formula estimating the locking range width in a cw laser subjected to a coherent optical injection [5]. ��i&g�5�)��l��*>[��J9 In section 2, we give the system conﬁguration and the corresponding mathematical model. xref 0000086935 00000 n WINSEM2017-18_ECE1007_TH_TT715_VL2017185004598_Reference Material I_The Semiconductor injection Laser.pptx - Free download as Powerpoint Presentation (.ppt / .pptx), PDF File (.pdf), Text File (.txt) or view presentation slides online. INTRODUCTION HE directly modulated semiconductor laser has appeared in many optical applications due to its availability and low cost. Set alert. H�b```f``Qa`e`�Odd@ A6 da�8�$��t(B�_k�K��= Since the semiconductor laser has unique features of high gain, low facet reflectivity, and amplitude-phase coupling through the α parameter, it is also sensitive to optical injection from a different laser. trailer 0000002322 00000 n A spectral description of an injected semiconductor laser is presented for usual injected power (> 30 dBm), by mapping out several phenomena, such as bistable areas, undamped relaxation and chaos synchronization. 0000084048 00000 n optical feedback, external optical injection, and injection cur-rent modulation. Optically Injected Semiconductor Laser Bowen Zhang ,DanZhu, Member, IEEE, Hao Chen, Yuewen Zhou, and Shilong Pan , Senior Member, IEEE Abstract—A microwave frequency measurement system utiliz-ing the optical injection technology in a semiconductor laser is proposed. High-Speed Modulation of Optical Injection-Locked Semiconductor Lasers by Erwin K. Lau S.B. 0000004402 00000 n Few studies have been done on the nonlinear dynamics of a semiconductor laser subjects to a non-constant optical injection. These techniques are referred to as “Fault Attacks”. This laser demonstrated an internal efficiency of 150% and a measured external modulation efficiency of 99.3%. 0000009575 00000 n WINSEM2017-18 ECE1007 TH TT715 VL2017185004598 Reference Material I the Semiconductor Injection Laser - Free download as Powerpoint Presentation (.ppt / .pptx), PDF File (.pdf), Text File (.txt) or view presentation slides online. injected-semiconductor-laser-based optoelectronic oscilla-tor (OEO) is proposed by subharmonic microwave modulation. : 3 Laser diodes can directly convert electrical energy into light. startxref 20m��,��2�q�J%�%S��x�D�gg�E�b�LI��Z�ŶZ��n۵uɞV��N�q*��!~?E��n�X\i��:��-r��33��Ů�v={]U?P��X&.wT�$�"�AUP��әWu�.��1�UP,��?��A��j�uS��}-�;��h�L)%i�Byy;��M�]ל��K� ��p{v�Ba.��B��>2)� S��a��%[D�Ȳ��R�Li��1�S-I��?�}��L��Li��!�c��*��O�y�-�}�gB��d�'�-,��=Ι#�d��Q��> �*>4�+��On��D��șI��V��D_v�q��eG�f4&�}O3cD"��"��fTyNn�޹��x��mYo��e�E��u׎��D�i��}& HCi��r��لV��L[-w��5)�z�a��d +��J,r�ʠu*$@��&�&( ��ߎn��t��jL��/ ��- D��h�s�{E"�F>5N�� in an injection locked semiconductor laser with a coincident reduction in parasitic chirp. Download as PDF. Our theoretical results are verified numerically and experimentally. 0000001749 00000 n H�tU[o�6~��8��P�"u�Է�Æ,��i��,�#��;��K �D��$��p�O��}�*��72M �ĕ�s�(�E)t�i#��T L��2f0��8 ��=�ɻ��#�f��m#~E��a�K��5�h��0��)�\�ĕVP5%�2�nAGI� Keywords: Injection Locking, Semiconductor Laser, Phase Noise, DFB laser 1. %PDF-1.3 %�� William T. Silfvast, in Encyclopedia of Physical Science and Technology (Third Edition), 2003. Van der Sande, L. Gelens, and J. Danckaert Department of Applied Physics and Photonics, Vrije Universiteit Brussel, Pleinlaan 2, B-1050 Brussel, Belgium (Dated: November11,2018) We theoretically investigate optical injection in semiconductor ring lasers and disclose several The semiconductor is made in unique manner for the semiconductor laser. �N_>Y"&6Wn��Nu��`�0�o�VQc�d;��R�5 @�z30��L��"}��Y�n�bm�\��u��:�-�}��c�M��i\�x��Qj��/r��w�`mrDF�kK�+��/)#�89�. Locking and unlocking phenomena in optically injected semiconductor lasers have been extensively studied. In other words, current is injected into the junction between N and P type materials. Abstract: Injection locking properties of a semiconductor laser have been analyzed, taking into account the injected carrier density dependent refractive index in the active region. 0000003037 00000 n 3. �C�/=:Н�s��lp"�� S"fcH~. 0000006897 00000 n �0D��c��$��,�qw��yቶ� 0000002159 00000 n 191 0 obj <> endobj 0000012931 00000 n Published under licence by IOP Publishing Ltd Quantum and Semiclassical Optics: Journal of the European Optical Society Part B, Volume 7, Number 2 Citation G H M van Tartwijk and D Lenstra 1995 Quantum Semiclass. 66 0 obj << /Linearized 1 /O 68 /H [ 1060 533 ] /L 330291 /E 105187 /N 8 /T 328853 >> endobj xref 66 31 0000000016 00000 n About this page. 0000003985 00000 n 0000001060 00000 n �#��i�3#�./5��x�i��kX��Nf!�G��v ߠ��~!��k�Ukb;��"�QV!��;� Self-injected semiconductor distributed feedback lasers for frequency chirp stabilization Khalil Kechaou,1,* Frédéric Grillot,1,2 Jean-Guy Provost,3 Bruno Thedrez,1 and Didier Erasme1 1Institut Mines-Telecom, Telecom ParisTech, CNRS LTCI, 46 rue Barrault, 75634 Paris Cedex, France 2Université Européenne de Bretagne, INSA, CNRS- Laboratoire FOTON, 20 avenue des buttes de … 0000123205 00000 n Semiconductor or diode lasers, typically about the size of a grain of salt, are the smallest lasers yet devised. Opt. 0000064683 00000 n 0000004034 00000 n Optically Injected Semiconductor Laser Bowen Zhang ,DanZhu, Member, IEEE, Hao Chen, Yuewen Zhou, and Shilong Pan , Senior Member, IEEE Abstract—A microwave frequency measurement system utiliz-ing the optical injection technology in a semiconductor laser is proposed. Read the latest chapters of Semiconductors and Semimetals at ScienceDirect.com, Elsevier’s leading platform of peer-reviewed scholarly literature semiconductor lasers (MOD) (see: K. Petermann, Laser diode modulation and noise, Kluwer Academic, 1991) ... (I - injection current, e - elementary charge, V - volume of the active region) describes the number of the injected carriers into the active region per volume and time. The techniques of CMO, CMA, and CSK can be applied to chaotic secure communications using semi-conductor lasers in various system configurations. 228 0 obj <>stream The side mode suppression and the relative intensity noise (RIN) of the locked laser (slave laser) are given for different wavelengths detuning between the master and slave laser and for different linewidth enhancement factors α. The junction shown is few micrometers thick. 0000059447 00000 n |��UQ��r��A]zPG uM��w ��.N�5��S@P10 In reality a semiconductor laser is simply a semiconductor diode, because its active medium is the junction of the forward biased P-N diode, shown as. Be applied to chaotic secure communications using semi-conductor lasers in their simplest form consist of a few millimetre length. To break the security measures of an optically injected semicon-ductor laser ( Third Edition ), 2003 typical dimensions a. 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